Thermal Effects in Design of Integrated CMOS MEMS High Resolution Pressure Sensor

Publications

Share / Export Citation / Email / Print / Text size:

International Journal on Smart Sensing and Intelligent Systems

Professor Subhas Chandra Mukhopadhyay

Exeley Inc. (New York)

Subject: Computational Science & Engineering, Engineering, Electrical & Electronic

GET ALERTS

eISSN: 1178-5608

DESCRIPTION

5
Reader(s)
10
Visit(s)
0
Comment(s)
0
Share(s)

VOLUME 2 , ISSUE 3 (September 2009) > List of articles

Thermal Effects in Design of Integrated CMOS MEMS High Resolution Pressure Sensor

C. RoyChaudhuri * / S K Datta * / H. Saha *

Keywords : Thermal effects, MEMS piezoresistive pressure sensor, dynamically linked library, CMOS MEMS integration

Citation Information : International Journal on Smart Sensing and Intelligent Systems. Volume 2, Issue 3, Pages 432-447, DOI: https://doi.org/10.21307/ijssis-2017-359

License : (CC BY-NC-ND 4.0)

Published Online: 03-November-2017

ARTICLE

ABSTRACT

Thermal effects in integrated piezoresistive MEMS pressure sensor may be a problem of concern in design for applications requiring high precision measurements and in continuously monitoring array of sensor network. It not only results in the shift of the offset voltage of the pressure sensor but also affects the performance of the adjacent CMOS circuit leading to erroneous values. To address this problem, the thermal effects of the integrated sensor chip along with its packaging arising out of the self heating of piezoresistors has been analyzed through a simple heat balance model which has been validated by FEM analysis and laboratory experiment. It is observed that for a typical packaged pressure sensor of 5.6mm by 5.6mm and heat transfer coefficient of 100Wm-2K-1, thermal effect may lead to a temperature rise of around 50C whereas for a high precision application of pressure sensor even 1-20C of temperature rise may lead to significant error. A methodology of co-design and a new MOS library called PTMOS for direct integration of these thermal effects of MEMS piezoresistors in the CMOS circuit has also been presented to reduce considerably the design cycle time of the integrated sensor. This integrated analysis thus helps in proper selection of the dimensions and packaging of the integrated sensor chip taking into account the thermal effects for the optimization of its space constraint and its performance with reduced design cycle time.

Content not available PDF Share

FIGURES & TABLES

REFERENCES

[1] S.Marco, J.Samitier, O.Ruiz, J.Morante, J.E.Steve, “High performance piezoresistive pressure sensors for biomedical applications using very thin structured membranes”, Meas. Sci. and Technol., vol.7, pp.1195-1203,1996
[2] C.Pramanik, H.Saha, “Piezoresistive pressure sensing by porous silicon membrane”, IEEE Sensors, vol.6, p.301,2006
[3] Sugiyama, S., K. Kawahata, M. Yoneda, and I. Igarashi, "Tactile Image Detection Using a 1Kelement Silicon Pressure Sensor Array." Sensors and Actuators. A21-A23:397-400, 1990.
[4] J.Borky, K.Wise, “Integrated signal conditioning for silicon pressure sensors”, IEEE Trans on Electron Devices,vol.26, pp.1906-1910, 1979
[5] Honeywell Precision Barometer(HPB/HPA)
[6] www.sensiron.com(SDP1000/SDP2000)
[7] K.S.Henriksen, D.T.Wang, H.Rogne, A.Ferber, A.Vogl, S.Moe, R.Bernstem,D.Lapadatu, K.Sandvar and S.Brida, “High Resolution pressure sensor for photoacoustic gas detection”, Sensors and Actuators A, vol.132, pp.207-213, 2006.
[8] K.Arshak, D.Morris, A.Arshak, O.Korostynska, E.Jafer, D.Waldron,J.harris, “Development of polymer based sensors for integration into a wireless data acquisition system suitable for monitoring environmental and physiological processes”, Biomolecular Engg., vol.23, pp.253-257,2006.
[9] O.Barnd, G.K.Fedder edited Advanced Micro and NanoSystems vol.2, CMOS-MEMS, Wiley- VCH,2005
[10] C.Pramanik, T.Islam, H.Saha , “Impact of self heating in a silicon MEMS piezoresistive pressure sensor”, Sensor Letters, vol.2, pp.131-137,2004.
[11] Y.C.Sun, Z.Gao, L.Qiang, Y.Zhang, “Modelling of the reverse current and its effects on the thermal drift of the offset voltage for piezoresistive pressure sensors”, Sensors and Actuators A, vol.116, pp.125-132, 2004.
[12] Aljancic, U.; Resnik, D.; Vrtacnik, D.; Mozek, M.; Amon, S., “Temperature effects modeling in silicon piezoresistive pressure sensor”, 11th Mediterranean Electrotechnical Conference, 2002, pp.36-40.
[13] K.Birkelund, P.Gravesen, S.Shiryaev, P.B.Rasmussen, M.D.Rasmussen, “High pressure silicon sensor with low-cost packaging”, Sensors and Actuators A, vol.92, pp.16-22, 2001.
[14] Kerry Cheung, “Modeling a MEMS Thermal Conductivity Pressure Sensor for the Evaluation of Glass Frit Vacuum Packaging”, Journal of Nano-to-Macro Energy Transport (JNET), 2004.
[15] S.M.Sze, Physics of Semiconductor Devices, Wiley Publishers, 1998.
[16] K.Matsuda, K.Suzuki, K.Yamamura, Y.Kanda, “Nonlinear piezoresistance effects in silicon”, J.Appl.Phys. ,vol. 73(4), p.1838, 1993.
[17] O. N. Tufte and E. L. Steizer, "Piezoresistive properties of silicon diffused layers", J. Appl. Phys. vol.34. 313-18 , 1963
[18] H.S.Carslaw, J.C.Jaeger, “Conduction of Heat in Solids”, Oxford UK 1959
[19] www.yutopian.com/Yuan/prop/Teflon.html
[20] T.L.Quarles, “The SPICE3 Implementation Guide” Electronics Research Laboratory, University of California, Berkeley, CA, 1989
[21] G. C. Cardinali, L. Dori, M. Fiorini, I. Sayago, G. Faglia, C. Perego, G. Sberveglieri, V. Liberali, F. Malobertiand D. Tonietto, “A Smart Sensor System for carbon Monoxide Detection”, Analog Integrated Circuits and Signal Processing, vol.14, pp.275-296,1997.
[22] C.RoyChaudhuri, V.Natarajan, P.Chatterjee, S.Gangopadhyay, V.Sreeramamurthy, H.Saha, “Design of A High Performance MEMS Pressure Sensor Array With Signal Conditioning Unit For Oceanographic Applications”, to be published in Sensors and Transducers journal.
[23] Anton Bakker, Kevin Thiele, and Johan H. Huijsing, “A CMOS Nested-Chopper Instrumentation Amplifier with 100-nV Offset”,IEEE J. of Solid State Circuits, vol.35, no.12, 2000, p.1877

EXTRA FILES

COMMENTS