Theoretical models and simulation of optoelectronic properties of a-Si-H PIN photosensors

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International Journal on Smart Sensing and Intelligent Systems

Professor Subhas Chandra Mukhopadhyay

Exeley Inc. (New York)

Subject: Computational Science & Engineering, Engineering, Electrical & Electronic

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VOLUME 7 , ISSUE 5 (December 2014) > List of articles

Special issue ICST 2014

Theoretical models and simulation of optoelectronic properties of a-Si-H PIN photosensors

Wagah F. Mohammed / Munther N. Al-Tikriti / Alhan M. Aldabag

Keywords : Silicon photosensors; PIN photodiode; amorphous Si; optoelectronic properties

Citation Information : International Journal on Smart Sensing and Intelligent Systems. Volume 7, Issue 5, Pages 1-5, DOI: https://doi.org/10.21307/ijssis-2019-102

License : (CC BY-NC-ND 4.0)

Published Online: 15-February-2020

ARTICLE

ABSTRACT

This research aims to study and discuss the theoretical models and simulation of optoelectronic properties of a-Si-H PIN photosensors based on Shockley–Read-Hall assumptions. The variation of carrier life time, recombination and generation rates as a function of the intrinsic layer (I-layer) thickness will be simulated using MATLAB program. The effects of intrinsic layer thickness on electrons and holes concentration, collection efficiency and short circuit current density have been studied and analyzed. It has been found that as the thickness increased, the parameters: recombination rate, generation rate, internal electric field, electrons and holes concentration, carriers’ life times, and short circuit current density, were subjected to some variations.

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